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Si4404DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
60
0.2
I D = 250 μ A
50
0.0
40
- 0.2
30
- 0.4
- 0.6
- 0. 8
20
10
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
10 -2
10 -1
1
10
100
600
T J - Temperat u re (°C)
Threshold Voltage
Time (s)
Single Pulse Power
2
1
D u ty Cycle = 0.5
0.2
N otes:
0.1
0.1
0.05
P DM
t 1
t 1
0.02
Single P u lse
t 2
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 67 °C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
D u ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P u lse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71247 .
www.vishay.com
4
Document Number: 71247
S09-0228-Rev. H, 09-Feb-09
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